aptc60hm70 r t3g APTC60HM70RT3G C rev 1 october, 2012 www.microsemi.com 1-8 all ratings @ t j = 25c unless otherwise specified 1. full bridge absolute maximum ratings (per coolmos?) these devices are sensitiv e to electrostatic discharge. proper handing procedures should be followe d. see application note apt0502 on www.microsemi.com all multiple inputs and outputs must be shorted together 7/24 ; 5/26 symbol parameter max ratings unit v dss drain - source breakdown voltage 600 v t c = 25c 39 i d continuous drain current t c = 80c 29 i dm pulsed drain current 160 a v gs gate - source voltage 20 v r dson drain - source on resistance 70 m ? p d maximum power dissipation t c = 25c 250 w i ar avalanche current (repetitive and non repetitive) 20 a e ar repetitive avalanche energy 1 e as single pulse avalanche energy 1800 mj coolmos? : v dss = 600v r dson = 70m ? max @ tj = 25c application ? solar converter features ? coolmos? - ultra low r dson - low miller capacitance - ultra low gate charge - avalanche energy rated ? very low stray inductance ? kelvin source for easy drive ? internal thermistor for temperature monitoring ? high level of integration benefits ? optimized conduction & switching losses ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? easy paralleling due to positive t c of v cesat ? rohs compliant full bridge + re ctifier bridge coolmos power module downloaded from: http:///
aptc60hm70 r t3g APTC60HM70RT3G C rev 1 october, 2012 www.microsemi.com 2-8 electrical characteristics (per coolmos?) symbol characteristic test conditions min typ max unit v gs = 0v,v ds = 600v t j = 25c 25 i dss zero gate voltage drain current v gs = 0v,v ds = 600v t j = 125c 250 a r ds(on) drain C source on resistance v gs = 10v, i d = 39a 70 m ? v gs(th) gate threshold voltage v gs = v ds , i d = 2.7ma 2.1 3 3.9 v i gss gate C source leakage current v gs = 20 v, v ds = 0v 100 na dynamic characteristics (per coolmos?) symbol characteristic test conditions min typ max unit c iss input capacitance 7 c oss output capacitance 2.56 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 0.21 nf q g total gate charge 259 q gs gate C source charge 29 q gd gate C drain charge v gs = 10v v bus = 300v i d = 39a 111 nc t d(on) turn-on delay time 21 t r rise time 30 t d(off) turn-off delay time 283 t f fall time inductive switching @ 125c v gs = 15v v bus = 400v i d = 39a r g = 5 ? 84 ns e off turn-off switching energy t j = 25c 980 e off turn-off switching energy v gs = 15v v bus = 400v i d = 39a r g = 5 ? t j = 125c 1206 j r thjc junction to case thermal resistance 0.5 c/w source - drain diode ratings and characteristics (per coolmos?) symbol characteristic test conditions min typ max unit tc = 25c 39 i s continuous source current (body diode) tc = 80c 29 a v sd diode forward voltage v gs = 0v, i s = - 39a 1.2 v dv/dt peak diode recovery ? 6 v/ns t rr reverse recovery time t j = 25c 580 ns q rr reverse recovery charge i s = - 39a v r = 350v di s /dt = 100a/s t j = 25c 23 c ? dv/dt numbers reflect the limitations of the circuit rather than the device itself. i s ? - 39a di/dt ? 100a/s v r ? v dss t j ? 150c downloaded from: http:///
aptc60hm70 r t3g APTC60HM70RT3G C rev 1 october, 2012 www.microsemi.com 3-8 2. rectifier bridge absolute maximum ratings (per diode) symbol parameter max ratings unit v r maximum dc reverse voltage v rrm maximum peak repetitive reverse voltage 600 v i f(av) maximum average forward current duty cycle = 50% t c = 80c 40 i fsm non-repetitive forward surge current 8.3ms t j = 45c 320 a electrical characteristics (per diode) symbol characteristic test conditions min typ max unit i f = 30a 1.8 2.2 i f = 60a 2.2 v f diode forward voltage i f = 30a t j = 125c 1.5 v t j = 25c 250 i rm maximum reverse leakage current v r = 600v t j = 125c 500 a dynamic characteristics (per diode) symbol characteristic test conditions min typ max unit t rr reverse recovery time i f =1a,v r =30v di/dt = 100a/s t j = 25c 22 ns t j = 25c 25 t rr reverse recovery time t j = 125c 160 ns t j = 25c 35 q rr reverse recovery charge t j = 125c 480 nc t j = 25c 3 i rrm reverse recovery current i f = 30a v r = 400v di/dt = 200a/s t j = 125c 6 a t rr reverse recovery time 85 ns q rr reverse recovery charge 920 c i rrm reverse recovery current i f = 30a v r = 400v di/dt = 1000a/s t j = 125c 20 a r thjc junction to case thermal resistance 1.2 c/w 3. thermal and package characteristics temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ? ?? ? ? ?? ? ? ?? ? ? ?? ? ? ? t t b r r t 1 1 exp 25 85/25 25 t: thermistor temperature r t : thermistor value at t downloaded from: http:///
aptc60hm70 r t3g APTC60HM70RT3G C rev 1 october, 2012 www.microsemi.com 4-8 package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2 3 n.m wt package weight 110 g 4. sp3f package outline (dimensions in mm) downloaded from: http:///
aptc60hm70 r t3g APTC60HM70RT3G C rev 1 october, 2012 www.microsemi.com 5-8 5. full bridge switches curves (per coolmos?) 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 4v 4.5v 5v 5.5v 6v 6.5v 0 40 80 120 160 200 0 5 10 15 20 25 v ds , drain to source voltage (v) i d , drain current (a) v gs =15&10v low voltage output characteristics transfert characteristics t j =25c t j =125c 0 20 40 60 80 100 120 140 01234567 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle 0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature ciss crss coss 10 100 1000 10000 100000 0 1 02 03 04 05 0 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage 0.8 0.9 1.0 1.1 1.2 25 50 75 100 125 150 t j , junction temperature (c) breakdown voltage vs temperature bv dss , drain to source breakdown voltage (normalized) on resistance vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 t j , junction temperature (c) r ds (on), drain to source on resistance (normalized) v gs =10v i d = 39a downloaded from: http:///
aptc60hm70 r t3g APTC60HM70RT3G C rev 1 october, 2012 www.microsemi.com 6-8 t j =25c t j =150c 1 10 100 1000 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage delay times vs current td(on) td(off) 0 50 100 150 200 250 300 350 0 10203040506070 i d , drain current (a) t d(on) and t d(off) (ns) v ds =400v r g =5 ? t j =125c l=100h rise and fall times vs current t r t f 0 20 40 60 80 100 120 0 10203040506070 i d , drain current (a) t r and t f (ns) v ds =400v r g =5 ? t j =125c l=100h switching energy vs current e off 0 0.5 1 1.5 2 2.5 0 10203040506070 i d , drain current (a) switching energy (mj) v ds =400v r g =5 ? t j =125c l=100h e off 0 1 2 3 4 5 0 5 10 15 20 25 30 35 40 45 50 gate resistance (ohms) switching energy (mj) switching energy vs gate resistance v ds =400v i d =39a t j =125c l=100h zvs 0 100 200 300 400 500 15 20 25 30 35 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =400v d=50% r g =5 ? t j =125c t c =75c threshold voltage vs temperature 0.6 0.7 0.8 0.9 1.0 1.1 25 50 75 100 125 150 t c , case temperature (c) v gs (th), threshold voltage (normalized) v ds =120v v ds =300v v ds =480v 0 2 4 6 8 10 12 14 0 50 100 150 200 250 300 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =39a t j =25c downloaded from: http:///
aptc60hm70 r t3g APTC60HM70RT3G C rev 1 october, 2012 www.microsemi.com 7-8 6. typical rectifier bridge performance curve (per diode) d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pu lse duration t j =25c t j =125c 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 v f , anode to cathode voltage (v) i f , forward current (a) forward current vs forward voltage i rrm vs. current rate of charge 15 a 30 a 60 a 0 5 10 15 20 25 0 200 400 600 800 1000 1200 -dif/dt (a/s) i rrm , reverse recovery current (a) t j =125c v r =400v trr vs. current rate of charge 15 a 30 a 60 a 50 75 100 125 150 175 0 200 400 600 800 1000 1200 -di f /dt (a/s) t rr , reverse recovery time (ns) t j =125c v r =400v q rr vs. current rate charge 15 a 30 a 60 a 0.0 0.5 1.0 1.5 0 200 400 600 800 1000 1200 -dif/dt (a/s) q rr , reverse recovery charge (c) t j =125c v r =400v capacitance vs. reverse voltage 0 25 50 75 100 125 150 175 200 1 10 100 1000 v r , reverse voltage (v) c, capacitance (pf) coolmos? comprise a new family of transi stors developed by infineon technologies ag. coolmos is a trademark of infineon technologies ag. downloaded from: http:///
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